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IDC08S120E - Schottky Diode

Datasheet Summary

Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.

Features

  • Revolutionary Semiconductor Material Silicon Carbide.
  • Switching Behaviour Benchmark.
  • No Reverse Recovery / No Forward Recovery.
  • Temperature Independent Switching Behaviour www. DataSheet4U. net.
  • Qualified According to JEDEC1) Based on Target.

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Datasheet Details

Part number IDC08S120E
Manufacturer Infineon Technologies
File Size 142.17 KB
Description Schottky Diode
Datasheet download datasheet IDC08S120E Datasheet
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IDC08S120E 1200V thinQ!TM SiC Schottky Diode Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A C Chip Type IDC08S120E VBR 1200V IF 7.5A Die Size 2.012 x 2.012 mm2 Package sawn on foil Mechanical Parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.012 x 2.012 1.476 x 1.476 4.
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