IDC08S120E Datasheet | Infineon

Features : Revolutionary Semiconductor Material Silicon Carbide - Switching Behaviour Benchmark - No Reverse Recovery / No Forward Recovery - Temperature Independent Switching Behaviour ..net - Qualified According to JEDEC1) Based on Target Applications - Applications: - - - - Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers Chip Type VBR 1200V IF 7.5A Die Size 2.012 x 2.012 mm2 Package sawn on foil Mechanical Parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 2.012 x 2.012 1.476 x 1.476 4.05 362 100 1652 Photoimide 3200 nm Al Ni Ag - system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2 Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current, limited by Tvjmax Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth Non-repetitive peak forward current i 2 t value Operating junction and storage temperature range Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj < 150°C TC =25° C , t P =10 ms TC =150° C , t P =10 ms TC = 100° C , Tvj = 1 50 ° C , D= 0 . 1 TC =25° C , t P = 1 0µs TC =25° C , t P =10 ms TC =150° C , t P =10 ms Condition T v j =25 °C Value 1200 1200 7.5 39 33 32 160 7 5 -55...+175 A2s °C A Unit V ∫i 2 dt Tvj , Tstg Static Characteristics (tested on wafer) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R = 12 00 V , Tvj = 2 5 ° C I F = 7 .5 A , Tvj = 2 5 ° C Value min. Typ. 8 1.6 max. 180 1.8 Unit µA V Static Characteristics (not...