IDD04S60C
IDD04S60C is Schottky Diode manufactured by Infineon.
2nd Generation thin Q!TM Si C Schottky Diode
Features
- Revolutionary semiconductor material
- Silicon Carbide
- Switching behavior benchmark
- No reverse recovery/ No forward recovery
- No temperature influence on the switching behavior
- High surge current capability
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC for target applications
..net
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Product Summary V DC Qc IF 600 8 4 V n C A
PG-TO252
- Breakdown voltage tested at 5m A2)
1 2 thin Q! 2G Diode specially designed for fast switching applications like:
- CCM PFC
- Motor Drives Type IDD04S60C Package PG-TO252 Marking D04S60C Pin 1 n.c. Pin 2 A
Pin 3 C
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<130 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.6 32 Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg
18 132 5.1 600 A2s V V/ns W °C
V R = 0….480V T C=25 °C
50 37 -55 ... 175
Rev. 2.0 page 1
2006-04-03
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient R th JA R th JC SMD version, device on PCB, minmal footprint SMD Version, device on PCB, 6 cm2 cooling3) reflow MSL 3 4.1 75 K/W Values typ. max. Unit
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