IDD05SG60C
IDD05SG60C is Schottky Diode manufactured by Infineon.
3rd Generation thin Q!TM Si C Schottky Diode
Features
- Revolutionary semiconductor material
- Silicon Carbide
- Switching behavior benchmark
- No reverse recovery / No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Breakdown voltage tested at 20m A2)
- Optimized for high temperature operation
- Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C thin Q! 3G Diode designed for fast switching applications like:
- SMPS e.g.; CCM PFC
- Motor Drives; Solar Applications; UPS
600 V 6 n C 5A
Type IDD05SG60C
Package PG-TO252-3
Marking D05G60C
Pin 1 n.c.
Pin 2 A
Pin 3 C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM sine halfwave
T C=25 °C, t p=10 ms T C=150 °C, t p=10...
