IDH02SG120 - Schottky Diode

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery / No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IDH02SG120
Manufacturer	Infineon Technologies
File Size	336.27 KB
Description	Schottky Diode
Datasheet	IDH02SG120 Datasheet
Additional preview pages of the IDH02SG120 datasheet.

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Full PDF Text Transcription

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IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation • Lowest Figure of Merit QC/IF www.DataSheet4U.net Product Summary V DC QC I F; T C< 130 °C 1200 600 3.2 7.2 3 2 V nC A PG-TO220-2 thinQ!TM 3G Diode designed for fast switching applications like: • SMPS e.g.

Published: Jul 7, 2011 |