IDH02SG120 Description
IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode.
IDH02SG120 Key Features
- Revolutionary semiconductor material
- Silicon Carbide
- Switching behavior benchmark
- No reverse recovery / No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target
IDH02SG120 Applications
- Optimized for high temperature operation