IDH04S60C Datasheet | Infineon

Features - Revolutionary semiconductor material - Silicon Carbide - Switching behavior benchmark - No reverse recovery/ No forward recovery - No temperature influence on the switching behavior - High surge current capability - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target applications ..net Product Summary V DC Qc IF 600 8 4 V n C A - Breakdown voltage tested at 5m A2) thin Q! 2G Diode specially designed for fast switching applications like: - CCM PFC - Motor Drives Type IDH04S60C Package PG-TO220-2 Marking D04S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.6 32 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev. 2.0 T sold I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 18 132 5.1 600 A2s V V/ns W °C Mcm °C 2009-07-03 V R = 0….480V T C=25 °C 50 42 -55 ... 175 M3 and M3.5 screws 1.6mm (0.063 in.) from case for 10s page 1 60 260 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R th JC R th JA leaded 3.6 62 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 m A I F=4 A, T j=25 °C I F=4 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Qc tc C V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f = MHz V...