IDH10S120 Datasheet | Infineon

Features - Revolutionary semiconductor material - Silicon Carbide - Switching behavior benchmark - No reverse recovery / No forward recovery - Temperature independent switching behavior - High surge current capability - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Optimized for high temperature operation ..net - Lowest Figure Product Summary VDC QC IF; TC< 130 °C 1200 600 3.2 36 10 3 V n C A PG-TO220-2 of Merit QC/IF thin Q!TM Diode designed for fast switching applications like: - SMPS e.g.; CCM PFC - Motor Drives; Solar Applications; UPS Type IDH10S120 Package PG-TO220-2 Marking D10S120 Pin 1 C Pin 2 A Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and M3.5 screws T j=25 °C VR= 0….960 V T C=25 °C Value 10 58 50 250 16 12 1200 50 135 -55 ... 175 260 60 Mcm V V/ns W °C A2s Unit A Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque I F,max ∫i 2dt Rev. 2.0 page 1 2010-04-20 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R th JC R th JA Thermal resistance, junction- ambient, leaded 1 62 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 m A, T j=25 °C I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=1200 V, T j=25 °C V R=1200 V, T j=150 °C AC characteristics Total capacitive charge Switching time2) Total capacitance Qc tc C V...