IDH10S60C Datasheet | Infineon

Features - Revolutionary semiconductor material - Silicon Carbide - Switching behavior benchmark - No reverse recovery/ No forward recovery - No temperature influence on the switching behavior - High surge current capability - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target applications ..net Product Summary V DC Qc IF 600 24 10 V n C A - Breakdown voltage tested at 5m A2) thin Q! 2G Diode specially designed for fast switching applications like: - CCM PFC - Motor Drives Type IDH10S60C Package PG-TO220-2 Marking D10S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 84 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev. 2.0 T sold I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 39 350 35 600 A2s V V/ns W °C Mcm °C 2009-06-02 V R = 0….480V T C=25 °C 50 100 -55 ... 175 M3 and M3.5 screws 1.6mm (0.063 in.) from case for 10s page 1 60 260 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R th JC R th JA leaded 1.5 62 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.14 m A I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 1.4 1.7 2.1 140 µA V V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc C V R=400 V, I F≤I...