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IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature operation
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Product Summary V DC Qc IF 600 3.2 2 V nC A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC Type IDT02S60C Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<120 °C T C<70 °C RMS forward current I F,RMS f =50 Hz T C=25 °C, t p=10 ms T C=150°C, t p=10 ms T j=150 °C, T C=100 °C, D =0.
IDT02S60C Datasheet
