IDT03S60C Datasheet | Infineon

Features - Revolutionary semiconductor material - Silicon Carbide - No reverse recovery/ no forward recovery - Temperature independent switching behavior - High surge current capability - Qualified according to JEDEC1) for target applications - Breakdown voltage tested at 5m A2) - Optimized for high temperature operation ..net Product Summary V DC Qc IF 600 5 3 V n C A PG-TO220-2-2 thin Q! 2G Diode designed for fast switching applications like: - CCM PFC Type IDT03S60C Maximum ratings, Parameter Continuous forward current Symbol Conditions IF T C<120 °C T C<70 °C RMS forward current I F,RMS f =50 Hz T C=25 °C, t p=10 ms T C=150°C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150°C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque V RRM dv/ dt P tot T j, T stg M3 and M3.5 screws T j=25 °C V R = 0….480V T C=25 °C Value 3 4.5 4.2 16 14 10.5 115 1.2 0.96 600 50 25 -55 ... 175 60 V V/ns W °C Mcm A2s Unit A Package PG-TO220-2-2 Marking D03S60C Pin 1 C Pin 2 A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value I F,RM I F,max ∫i 2dt Rev. 2.0 page 1 2007-04-25 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Electrical characteristics Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05m A, T j=25°C I F=3 A, T j=25 °C I F=3 A, T j=150 °C I F=4.5 A, T j=25 °C I F=4.5 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Qc tc C V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f = MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 5 90 12 12 <10 n C ns p F 600 1.7 2.1 2.1 2.8 0.32 1.3 1.9 2.6 2.4...