IDV02S60C Datasheet | Infineon

ption The second generation of Infineon Si C Schottky diodes has emerged over the years as the industry standard. The IDVxx S60C family is extending the already broad portfolio with the TO220Full PAK package. In order to greatly reduce the impact of the internal isolation of the Full PAK on the thermal performance, Infineon is applying its patented diffusion soldering process for attaching the chip to the leadframe. The result is nearly identical thermal characteristics to those of the Si C diodes in the non-isolated TO220 package. Features - - - - - - - - Revolutionary semiconductor material - Silicon Carbide Nearly no reverse / forward recovery charge High surge current capability Fully isolated package with nearly similar Rth,jc as the standard T0220 Suitable for high temperature operation Pb-free lead plating; Ro HS pliant Qualified according to JEDEC1) for target applications Switching behavior independent of forward current, switching speed and temperature Benefits - - - - - - System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Good thermal performance without the need for additional isolation layer and washer Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures and less fans Reduced EMI Applications Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS Table 1 Parameter Key Performance Parameters Value 600 3.2 Unit V n C A VDC QC IF @ TC < 120°C 2 Table 2 Pin 1 C Pin Definition Pin2 A Pin 3 n.a. Package PG-TO220 Full PAK Marking D02S60C Related Links IFX Si C Diodes Webpage Type / Ordering Code IDV02S60C 1) J-STD20 and JESD22 Final Data Sheet Rev. 2.0, 2010-05-31 2nd Generation thin Q!™ Si C Schottky Diode IDV02S60C Table of Contents Table of Contents 1 Description - - - - - - - - - - -...