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IDV03S60C - Schottky Diode

Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard.

The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package.

Features

  • Revolutionary semiconductor material - Silicon Carbide Nearly no reverse / forward recovery charge High surge current capability Fully isolated package with nearly similar Rth,jc as the standard T0220 Suitable for high temperature operation Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IDV03S60C
Manufacturer Infineon Technologies
File Size 1.22 MB
Description Schottky Diode
Datasheet download datasheet IDV03S60C Datasheet
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SiC Silicon Carbide Diode www.DataSheet4U.net 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C 1 Description The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying it´s new diffusion soldering process for attaching the chip to the leadframe. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package.
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