IKP03N120H2 Datasheet | Infineon

IKP03N120H2, IKW03N120H2 .. IKB03N120H2 High Speed 2-Technology with soft, fast recovery anti-parallel Em Con HE diode - Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation High Speed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-247-3-1 (TO-247AC) - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type IKW03N120H2 IKP03N120H2 IKB03N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140k Hz TC = 100°C, f = 140k Hz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot IF 9.6 3.9 ±20 62.5 V W ICpuls Symbol VCE IC 9.6 3.9 9.9 9.9 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 3A 3A 3A Eoff 0.15m J 0.15m J 0.15m J Tj 150°C 150°C 150°C Package P-TO-247 P-TO-220-3-1 P-TO-263 (D PAK) Ordering Code Q67040-S4595 Q67040-S4594 Q67040-S4597 Power Semiconductors Rev. 2, Mar-04 IKP03N120H2, IKW03N120H2 .. IKB03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB1) Rth JA Rth JA P-TO-220-3-1 P-TO-247-3-1 P-TO-263 (D2PAK) 62 40 Rth JCD 3.2 Rth JC 2.0 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0 µ A...