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IKW75N65EL5 Datasheet IGBT

Manufacturer: Infineon

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General Description

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Overview

IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW75N65EL5 650VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl.

Key Features

  • C Low VCE(sat) L5 technology offering.
  • Very low collector-emitter saturation voltage VCEsat.
  • Best-in-Class tradeoff between conduction and switching losses.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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