IKW75N65EL5 - IGBT

Description

Features

C Low VCE(sat) L5 technology offering.
Very low collector-emitter saturation voltage VCEsat.
Best-in-Class tradeoff between conduction and switching losses.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	IKW75N65EL5
Manufacturer	Infineon
File Size	1.70 MB
Description	IGBT
Datasheet	IKW75N65EL5 Datasheet
Additional preview pages of the IKW75N65EL5 datasheet.

📁 Similar Datasheet

IKW75N65EH5 - IGBT (Infineon)
IKW75N65ES5 - IGBT (Infineon)
IKW75N65ET7 - Low loss Duopack IGBT (Infineon)
IKW75N60H3 - IGBT (Infineon)
IKW75N60TA - IGBT (Infineon)
IKW08N120CS7 - 1200V IGBT (Infineon)
IKW15N120CS7 - 1200V IGBT (Infineon)
IKW15N120H3 - IGBT (Infineon)
IKW15N120T2 - IGBT (Infineon)
IKW20N60TA - IGBT (Infineon)

Other Datasheets by Infineon Technologies

IKW75N60T - IGBT
IKW03N120H2 - HighSpeed 2-Technology
IKW08T120 - IGBT
IKW15T120 - IGBT
IKW20N60H3 - IGBT
IKW20N60T - IGBT
IKW25N120H3 - High speed IGBT
IKW25N120T2 - IGBT

Full PDF Text Transcription

Click to expand full text

IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW75N65EL5 650VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IKW75N65EL5 LowVCE(sat)seriesfifthgeneration LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: C LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating •RoHScompliant •CompleteproductspectrumandPSpicemodels: http://www.

Published: Feb 7, 2015 |