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IKW75N65EH5 Datasheet IGBT

Manufacturer: Infineon

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General Description

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Overview

IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1 fastandsoftantiparalleldiode IKW75N65EH5 650VDuoPackIGBTandfull-rateddiode.

Key Features

  • C High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • IGBT copacked with full-rated RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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