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IKW75N65EH5 - IGBT

Description

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Features

  • C High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • IGBT copacked with full-rated RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number IKW75N65EH5
Manufacturer Infineon
File Size 2.08 MB
Description IGBT
Datasheet download datasheet IKW75N65EH5 Datasheet
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IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1 fastandsoftantiparalleldiode IKW75N65EH5 650VDuoPackIGBTandfull-rateddiode Highspeedseriesfifthgeneration Datasheet IndustrialPowerControl IKW75N65EH5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated RAPID1fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplicat
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