IKW75N65ES5 Overview
Key Features
- Highspeedsmoothswitchingdeviceforhard&softswitching
- VeryLowVCEsat,1.42Vatnominalcurrent
- PlugandplayreplacementofpreviousgenerationIGBTs
- 650Vbreakdownvoltage
- LowgatechargeQG
- IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
- Maximumjunctiontemperature175°C
- QualifiedaccordingtoJEDECfortargetapplications
- Pb-freeleadplating;RoHScompliant
- CompleteproductspectrumandPSpiceModels: G E
