IPB017N06N3G
IPB017N06N3G is Power Transistor manufactured by Infineon.
Type
IPB017N06N3 G
Opti MOS™3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21 Type IPB017N06N3 G
Product Summary V DS R DS(on),max ID 60 1.7 180 V mΩ A
Package Marking
PG-TO263-7 017N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2) 3) 4)
Value 180 180 720 634 ±20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=100 A, R GS=25 Ω m J V W °C
T C=25 °C
250 -55 ... 175 55/175/56
J-STD20 and JESD22 Current is limited by bondwire; with an R th JC=0.6 K/W the chip is able to carry 284 A. See figure 3 for more detailed information See figure 13 for more detailed information
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Rev. 2.2 page 1
2009-11-16
IPB017N06N3...
