IPB017N06N3
IPB017N06N3 is Power Transistor manufactured by Infineon.
- Part of the IPB017N06N3G comparator family.
- Part of the IPB017N06N3G comparator family.
Type
IPB017N06N3 G
Opti MOS™3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
IPB017N06N3 G
Product Summary V DS R DS(on),max ID
60 V 1.7 mΩ 180 A
Package Marking
PG-TO263-7 017N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4)
E AS
I D=100 A, R GS=25...
