IPB081N06L3G
IPB081N06L3G is Power-Transistor manufactured by Infineon.
Type
Opti MOS™3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, logic level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G
Product Summary VDS RDS(on),max (SMD) ID
60 V 8.1 mΩ 50 A
Type
IPB081N06L3 G
IPP084N06L3 G
IPI084N06L3 G
Package Marking
PG-TO263-3 081N06L
PG-TO220-3 084N06L
PG-TO262-3 084N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature
I D T C=25 °C2) T C=100 °C
I D,pulse T C=25 °C E AS I D=50 A, R GS=25 Ω V GS P tot T C=25 °C T j, T...
