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IPB081N06L3 - Power-Transistor

This page provides the datasheet information for the IPB081N06L3, a member of the IPB081N06L3G Power-Transistor family.

Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB081N06L3
Manufacturer Infineon
File Size 415.05 KB
Description Power-Transistor
Datasheet download datasheet IPB081N06L3 Datasheet
Additional preview pages of the IPB081N06L3 datasheet.

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Full PDF Text Transcription

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Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.
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