IPB11N03LAG Datasheet | Infineon

Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC1) for target application - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated - Pb-free lead plating; Ro HS pliant Product Summary V DS R DS(on),max (SMD version) ID 25 11.2 30 V mΩ A PG-TO263-3-2 Type IPB11N03LA G Package PG-TO263-3-2 Marking 11N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 30 30 210 80 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 52 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 1.4 page 1 2006-05-11 .. IPB11N03LA G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=20 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=20 A, SMD version V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 µA V 2.9 62 40 K/W Values typ. max. Unit - 10 10 14.5 100 100 18.2 n A mΩ 9.3 1 39 11.2 Ω S 2) Current is limited by bondwire; with an R th JC=2.9 K/W the chip is able...