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IPB11N03LAG - Power-Transistor

Key Features

  • Ideal for high-frequency dc/dc converters.
  • Qualified according to JEDEC1) for target.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com IPB11N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 11.