IPB120N06NG Datasheet | Infineon

Features - For fast switching converters and sync. rectification - N-channel enhancement - normal level - 175 °C operating temperature - Avalanche rated - Pb-free lead plating, Ro HS pliant Product Summary V DS R DS(on),max ID SMDversion 60 11.7 75 V mΩ A Type IPP120N06N G IPB120N06N G Package Marking P-TO220-3-1 120N06N P-TO263-3-2 120N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 75 53 300 280 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=75 A, R GS=25 Ω I D=75 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 158 -55 ... 175 55/175/56 See figure 3 Rev. 1.11 page 1 2006-07-05 .. IPB120N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=94 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=75 A V GS=10 V, I D=75 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=75 A 60 1.2 3 0.01 Values typ. IPP120N06N G Unit max. 0.95 62 40 K/W 2 1 µA -...