• Part: IPB120N06S4-03
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 166.83 KB
Download IPB120N06S4-03 Datasheet PDF
Infineon
IPB120N06S4-03
IPB120N06S4-03 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Product Summary V DS R DS(on),max (SMD version) ID 60 V 2.8 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0603 4N0603 4N0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 120 480 392 120 ±20 167 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.0 page 1 2009-03-23 IPB120N06S4-03 IPI120N06S4-03,...