• Part: IPB120N03S4L-03
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 214.56 KB
Download IPB120N03S4L-03 Datasheet PDF
Infineon
IPB120N03S4L-03
IPB120N03S4L-03 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 30 V 3 m W 120 A PG-TO263-3-2 Type IPB120N03S4L-03 Package PG-TO263-3-2 Ordering Code Marking - 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 480 75 120 ±16 79 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.1 page...