Datasheet4U Logo Datasheet4U.com

IPB120N04S4L-02 - Power-Transistor

Key Features

  • N-channel Logic Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 1.7 mΩ 120 A PG-TO263-3-2 Type IPB120N04S4L-02 Package PG-TO263-3- Marking 4N04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB120N06NG Power-Transistor Infineon Technologies
IPB120N10S4-05 N-Channel MOSFET Transistor Inchange Semiconductor
IPB123N10N3G Power-Transistor Infineon Technologies
IPB123N10N3G N-Channel MOSFET INCHANGE
IPB12CN10NG N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB120N04S4-01 Power-Transistor
IPB120N04S4-02 Power-Transistor
IPB120N04S4-04 Power-Transistor
IPB120N04S3-02 Power-Transistor
IPB120N03S4L-03 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 1.