• Part: IPB120N04S4L-02
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 199.67 KB
Download IPB120N04S4L-02 Datasheet PDF
Infineon
IPB120N04S4L-02
IPB120N04S4L-02 is Power-Transistor manufactured by Infineon.
Features - N-channel Logic Level - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 1.7 mΩ 120 A PG-TO263-3-2 Type IPB120N04S4L-02 Package PG-TO263-3- Marking 4N04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 120 480 480 120 +20/-16 158 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.0 page 1 2013-06-03 Data Sheet Parameter Symbol...