IPB123N10N3G - Power-Transistor

Product Overview

Infineon Technologies

Part number	IPB123N10N3G
Manufacturer	Infineon Technologies
File Size	342.25 KB
Description	Power-Transistor
Datasheet	IPB123N10N3G Datasheet
Additional preview pages of the IPB123N10N3G datasheet.

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Nov 12, 2015 |