Datasheet4U Logo Datasheet4U.com

IPB123N10N3G - Power-Transistor

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB123N10N3G N-Channel MOSFET INCHANGE
IPB123N10N3 Power-Transistor Infineon
IPB120N03S4L-03 Power-Transistor Infineon
IPB120N04S3-02 Power-Transistor Infineon
IPB120N04S4-01 Power-Transistor Infineon

Other Datasheets by Infineon

Part Number Description
IPB120N06NG Power-Transistor
IPB12CNE8NG Power-Transistor
IPB100N04S2-04 Power-Transistor
IPB100N04S2L-03 Power-Transistor
IPB100N04S3-03 OptiMOS-T Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.