IPB123N10N3G
IPB123N10N3G is Power-Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
Product Summary V DS R DS(on),max TO-263 ID
100 V 12.3 mΩ 58 A
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package
PG-TO220-3
PG-TO263-3
Marking
126N10N
123N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
PG-TO262-3 126N10N
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2) T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=46 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58 42 232 70 ±20 94 -55 ... 175 55/175/56
1)J-STD20 and JESD22 2) See figure 3
Unit A m J V W °C
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