IPB123N10N3
IPB123N10N3 is Power-Transistor manufactured by Infineon.
- Part of the IPB123N10N3G comparator family.
- Part of the IPB123N10N3G comparator family.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max TO-263 ID
100 V 12.3 mΩ 58 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package Marking
PG-TO220-3 126N10N
PG-TO263-3 123N10N
PG-TO262-3 126N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=46 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58 42 232 70 ±20 94 -55 ... 175 55/175/56
1)J-STD20 and JESD22 2) See figure 3
Unit A m J V W...
