Datasheet4U Logo Datasheet4U.com

IPB123N10N3 Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Technologies Logo IPB123N10N3G Power-Transistor Infineon Technologies
INCHANGE Logo IPB123N10N3G N-Channel MOSFET INCHANGE

More Datasheets from Infineon

Part Number Description
IPB120N03S4L-03 Power-Transistor
IPB120N04S3-02 Power-Transistor
IPB120N04S4-01 Power-Transistor
IPB120N04S4-02 Power-Transistor
IPB120N04S4-04 Power-Transistor
IPB120N04S4L-02 Power-Transistor
IPB120N06S4-02 Power-Transistor
IPB120N06S4-03 Power-Transistor
IPB120N06S4-H1 Power-Transistor
IPB120N08S4-03 Power-Transistor

IPB123N10N3 Distributor