Part IPB16CNE8NG
Description Power-Transistor
Category Transistor
Manufacturer Infineon
Size 595.57 KB
Infineon
IPB16CNE8NG

Overview

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 16 53 V mΩ A
  • Ideal for high-frequency switching and synchronous rectification Type IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Package Marking