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IPB65R190E6 - Power Transistor

This page provides the datasheet information for the IPB65R190E6, a member of the IPA-65R190 Power Transistor family.

Datasheet Summary

Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • JEDEC1) qualified, Pb-free plating, Halogen free.

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Datasheet Details

Part number IPB65R190E6
Manufacturer Infineon Technologies
File Size 2.03 MB
Description Power Transistor
Datasheet download datasheet IPB65R190E6 Datasheet
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Full PDF Text Transcription

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
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