• Part: IPB80N06S3L-06
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 182.72 KB
Download IPB80N06S3L-06 Datasheet PDF
Infineon
IPB80N06S3L-06
IPB80N06S3L-06 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (Ro HS pliant) - 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L06 3N06L06 3N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=40 A Avalanche current, single pulse I AS Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 320 455 80 ±16 136 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.1 page 1 2007-11-07 IPB80N06S3L-06 IPI80N06S3L-06,...