IPB80N06S3L-06 - Power-Transistor

Datasheet Summary

Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green product (RoHS compliant).
100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L0.

Infineon Technologies

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Datasheet Details

Part number	IPB80N06S3L-06
Manufacturer	Infineon Technologies
File Size	182.72 KB
Description	Power-Transistor
Datasheet	IPB80N06S3L-06 Datasheet
Additional preview pages of the IPB80N06S3L-06 datasheet.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.

Published: Oct 7, 2009 |