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IPD068N10N3G - Power-Transistor

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Infineon Technologies

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IPD068N10N3G Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPD068N10N3G

Datasheet Details

Part number	IPD068N10N3G
Manufacturer	Infineon Technologies
File Size	483.00 KB
Description	Power-Transistor
Datasheet	IPD068N10N3G Datasheet
Additional preview pages of the IPD068N10N3G datasheet.

Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Nov 12, 2015 |