IPD068N10N3
IPD068N10N3 is N-Channel MOSFET manufactured by Inchange Semiconductor.
isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3
- Features
- Static drain-source on-resistance:
RDS(on)≤6.8mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High frequency switching
-...
