The IPD068N10N3 is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD068N10N3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤6.8mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt. |
| Part Number | IPD068N10N3 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 1.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Ideal for high-frequency. |
| Seller | Inventory | Price Breaks | Buy |
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| Newark | 436 | 5+ : 2.58 USD 10+ : 1.88 USD 25+ : 1.69 USD 50+ : 1.49 USD |
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| Future Electronics | 2500 | 2500+ : 1.76 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD068N10N3G | Infineon | Power-Transistor |