IPD12CNE8NG Description
IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor.
IPD12CNE8NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- IPD12CNE8N G IPP12CNE8N G
- 10 1 9.2