IPD12CNE8NG
IPD12CNE8NG is Power-Transistor manufactured by Infineon.
- Part of the IPB-12CNE comparator family.
- Part of the IPB-12CNE comparator family.
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IPB12CNE8N G IPI12CNE8N G
IPD12CNE8N G IPP12CNE8N G
OptiMOS®2 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO252) ID 85 12.4 67 V mΩ A
- Ideal for high-frequency switching and synchronous rectification Type IPB12CN10N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G
Package Marking
PG-TO263-3 12CNE8N
PG-TO252-3 12CNE8N
PG-TO262-3 12CNE8N
PG-TO220-3 12CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified...
