IPD160N04LG Datasheet | Infineon

Type OptiMOS®3 Power-Transistor Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC1) for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 100% Avalanche tested - Pb-free plating; RoHS pliant Type IPD160N04L G Product Summary V DS R DS(on),max ID IPD160N04L G 40 V 16 mΩ 30 A Package Marking PG-TO252-3 160N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1)...