IPD16CNE8NG Datasheet | Infineon

.. IPB16CNE8N G IPI16CNE8N G IPD16CNE8N G IPP16CNE8N G OptiMOS®2 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 16 53 V mΩ A - Ideal for high-frequency switching and synchronous rectification Type IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Package Marking PG-TO263-3 16CNE8N PG-TO252-3 16CNE8N PG-TO262-3 16CNE8N PG-TO220-3 16CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter...