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IPD200N15N3G Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

IPD200N15N3 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Infineon Logo IPD200N15N3 Power-Transistor Infineon
INCHANGE Logo IPD200N15N3 N-Channel MOSFET INCHANGE

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