IPD200N15N3G
IPD200N15N3G is Power-Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 20 m W 50 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G
IPP200N15N3 G
Package
PG-TO263-3
PG-TO252-3
Marking
200N15N
200N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO262-3 200N15N
PG-TO220-3 200N15N
Value
Unit
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=50 A, R GS=25 W
Reverse diode dv /dt dv /dt
I D=50 A, V DS=120 V, di /dt =100 A/µs, T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T...
