IPD200N15N3 Overview
isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·
IPD200N15N3 Key Features
- Static drain-source on-resistance
- DESCRITION -High frequency switching

