The IPD200N15N3 is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD200N15N3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤20mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volta. |
| Part Number | IPD200N15N3 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Ideal . |
| Seller | Inventory | Price Breaks | Buy |
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| Avnet | 12500 | 2500+ : 0.79647 USD 5000+ : 0.77642 USD 10000+ : 0.75636 USD 20000+ : 0.73631 USD |
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| Avnet | 12 | 1+ : 3.14 USD 10+ : 2.04 USD 25+ : 1.83 USD 50+ : 1.62 USD |
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| Newark | 12 | 1+ : 3.14 USD 10+ : 2.04 USD 25+ : 1.83 USD 50+ : 1.62 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD200N15N3G | Infineon | Power-Transistor |