IPI110N20N3G
IPI110N20N3G is Power Transistor manufactured by Infineon.
IPB107N20N3 G
IPP110N20N3 G IPI110N20N3 G
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max (TO263) ID 200 10.7 88 V mW A
- Ideal for high-frequency switching and synchronous rectification Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
Package Marking
PG-TO263-3 107N20N
PG-TO220-3 110N20N
PG-TO262-3 110N20N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain...
