IPI110N20N3 - Power-Transistor

This page provides the datasheet information for the IPI110N20N3, a member of the IPI110N20N3G Power-Transistor family.

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPI110N20N3
Manufacturer	Infineon
File Size	629.24 KB
Description	Power-Transistor
Datasheet	IPI110N20N3 Datasheet
Additional preview pages of the IPI110N20N3 datasheet.

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Full PDF Text Transcription

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IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.

Published: Sep 30, 2020 |