IPI80N08S2-07 Datasheet | Infineon

Opti MOS® Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) PG-TO263-3-2 - Ultra low Rds(on) - 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.1 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code Marking SP0002-19048 2N0807 SP0002-19040 2N0807 SP0002-19043 2N0807 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) I D,pulse E AS V GS T C=25 °C I D=80A Power...