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IPP04CNE8NG Datasheet Power-transistor

Manufacturer: Infineon

Overview: www.DataSheet4U.com IPB04CNE8N G IPP04CNE8N G OptiMOS®2 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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