IPP111N15N3G Description
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ.
IPP111N15N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant; Halogen free
- Qualified according to JEDEC1) for target application
- case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 0.7 62 40 K/W
- 10 1 9.4