IPP111N15N3G
IPP111N15N3G is Power Transistor manufactured by Infineon.
IPB108N15N3 G
IPP111N15N3 G IPI111N15N3 G
OptiMOS 3 Power-Transistor
Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant; Halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package Marking
PG-TO263-3 108N15N
PG-TO220-3 111N15N
PG-TO262-3 111N15N
Maximum ratings, at T j=25 °C, unless otherwise specified...
