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IPP111N15N3 - Power-Transistor

This page provides the datasheet information for the IPP111N15N3, a member of the IPP111N15N3G Power-Transistor family.

Product Overview

Infineon

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IPP111N15N3 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPP111N15N3

Datasheet Details

Part number	IPP111N15N3
Manufacturer	Infineon
File Size	732.59 KB
Description	Power-Transistor
Datasheet	IPP111N15N3 Datasheet
Additional preview pages of the IPP111N15N3 datasheet.

IPP111N15N3 Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; Halogen free.
Qualified according to JEDEC1) for target.

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Published: Sep 30, 2020 |