IPSH4N03LA Datasheet | Infineon

IPDH4N03LA G IPSH4N03LA G Opti MOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC1) for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Superior thermal resistance - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant Product Summary V DS R DS(on),max (SMD Version) ID 25 4.2 90 V mΩ A Type IPDH4N03LA G IPSH4N03LA G Package Ordering Code Marking P-TO252-3-11 Q67042-S4250 H4N03LA P-TO251-3-11 Q67042-S4254 H4N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=90 A, R GS=25 Ω I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 90 77 360 150 6 ±20 94 -55 ... 175 55/175/56 m J k V/µs V W °C Unit A Rev. 0.92 - target data sheet page 1 2004-10-27 .Data Sheet.in IPDH4N03LA G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=40 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=4.5 V, I D=50 A, SMD version V GS=10 V, I D=60 A V GS=10 V, I D=60 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=60 A 25 1.2 1.6 0.1 Values typ. IPSH4N03LA G Unit max. 1.6 75...