IPSH6N03LB
IPSH6N03LB is OptiMOS2 Power-Transistor manufactured by Infineon.
Type
IPUH6N03LB
Opti MOS®2 Power-Transistor
Package Marking
- Qualified according to JEDEC1) for target applications
- N-channel
- Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A
Type
IPUH6N03LB
Package Marking
PG-TO251-3 H6N03LB
PG-TO251-3-11 H6N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit
Continuous drain current
T C=25 °C2) T C=100 °C
50 50 200 160 6 ±20
Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1)
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C
T C=25 °C
83 -55 ... 175 55/175/56
J-STD20 and JESD22
Rev. 0.3 page...
