IPU64CN10NG Description
IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor.
IPU64CN10NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G
- case Thermal resistance, junction ambient (TO252) R thJC minimal footprint 6 cm² cooling area 4) 3.4 75 50 K/W Values ty
- 428 132 6 7 3 9 2
- 3 2 3 6 6.3 13