K75T60 Datasheet | Infineon

IKW75N60T TRENCHSTOP™ Series q Low Loss Duo Pack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode - Very low VCE(sat) 1.5V (typ.) - Maximum Junction Temperature 175°C - Short circuit withstand time 5s - Positive temperature coefficient in VCE(sat) - very tight parameter distribution - high ruggedness, temperature stable behaviour - very high switching speed - Low EMI - Very soft, fast recovery anti-parallel Emitter Controlled HE diode - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Applications: - Frequency Converters - Uninterrupted Power Supply PG-TO247-3 Type IKW75N60T VCE 600V IC 75A VCE(sat),Tj=25°C 1.5V Tj,max 175C Marking K75T60 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circuit withstand time3) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction...