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PTFA192001E

Manufacturer: Infineon

PTFA192001E datasheet by Infineon.

PTFA192001E datasheet preview

PTFA192001E Datasheet Details

Part number PTFA192001E
Datasheet PTFA192001E_InfineonTechnologies.pdf
File Size 296.01 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA192001E page 2 PTFA192001E page 3

PTFA192001E Overview

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

PTFA192001E Key Features

  • Average output power = 47.0 dBm
  • Linear Gain = 15.9 dB
  • Efficiency = 27%
  • Intermodulation distortion = -36 dBc
  • Adjacent channel power = -41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
  • Average output power = 48.5 dBm
  • Linear Gain = 15.9 dB
  • Efficiency = 34%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -40 dBc Typical CW performance, 1960 MHz, 30 V
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