PTFA192001E Datasheet (Infineon)

Part PTFA192001E
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 296.01 KB
Pricing from 99.99 USD, available from Component Stockers USA and Worldway Electronics.
Infineon

PTFA192001E Overview

Key Specifications

Mount Type: Screw
Pins: 3
Operating Voltage: 30 V
Max Frequency: 1.99 GHz

Description

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Average output power = 47.0 dBm
  • Linear Gain = 15.9 dB
  • Efficiency = 27%
  • Intermodulation distortion = –36 dBc
  • Adjacent channel power = –41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB

Price & Availability

Seller Inventory Price Breaks Buy
Component Stockers USA 263 1+ : 99.99 USD View Offer
Worldway Electronics 11348 7+ : 45.9954 USD
10+ : 45.0755 USD
100+ : 43.6956 USD
500+ : 42.3158 USD
View Offer