PTFA192001F Datasheet (Infineon)

Part PTFA192001F
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 296.01 KB
Infineon

PTFA192001F Overview

Key Specifications

Pins: 3
Max Operating Temp: 150 °C

Description

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Average output power = 47.0 dBm
  • Linear Gain = 15.9 dB
  • Efficiency = 27%
  • Intermodulation distortion = –36 dBc
  • Adjacent channel power = –41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB

Price & Availability

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