PTFA192001F Datasheet | Infineon

scription The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 m A, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing -25 30 Features - - - 25 Pb-free, Ro HS-pliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 47.0 d Bm - Linear Gain = 15.9 d B - Efficiency = 27% - Intermodulation distortion = - 36 d Bc - Adjacent channel power = - 41 d Bc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 d B - Average output power = 48.5 d Bm - Linear Gain = 15.9 d B - Efficiency = 34% - Intermodulation distortion = - 37 d Bc - Adjacent channel power = - 40 d Bc Typical CW performance, 1960 MHz, 30 V - Output power at P- 1d B = 240 W - Efficiency = 57% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power Efficiency IM3 (d Bc), ACPR (d Bc) -30 -35 -40 -45 -50 -55 34 36 38 40 42 44 46 48 IM3 20 15...