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PTFA192001F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA192001F, a member of the PTFA192001E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30 Features.
  • 25 Pb-free, RoHS-compliant and therma.

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Datasheet preview – PTFA192001F

Datasheet Details

Part number PTFA192001F
Manufacturer Infineon Technologies
File Size 296.01 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA192001F Datasheet
Additional preview pages of the PTFA192001F datasheet.

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Full PDF Text Transcription

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PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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